0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS - researchr publication authors

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Po-Hung Chen, Koichi Ishida, Xin Zhang, Yasuaki Okuma, Yoshikatsu Ryu, Makoto Takamiya, Takayasu Sakurai. 0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS. In Jacqueline Snyder, Rakesh Patel, Tom Andre, editors, IEEE Custom Integrated Circuits Conference, CICC 2010, San Jose, California, USA, 19-22 September, 2010, Proceedings. pages 1-4, IEEE, 2010. [doi]

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