0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS

Po-Hung Chen, Koichi Ishida, Xin Zhang, Yasuaki Okuma, Yoshikatsu Ryu, Makoto Takamiya, Takayasu Sakurai. 0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS. In Jacqueline Snyder, Rakesh Patel, Tom Andre, editors, IEEE Custom Integrated Circuits Conference, CICC 2010, San Jose, California, USA, 19-22 September, 2010, Proceedings. pages 1-4, IEEE, 2010. [doi]

@inproceedings{ChenIZORTS10,
  title = {0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS},
  author = {Po-Hung Chen and Koichi Ishida and Xin Zhang and Yasuaki Okuma and Yoshikatsu Ryu and Makoto Takamiya and Takayasu Sakurai},
  year = {2010},
  doi = {10.1109/CICC.2010.5617444},
  url = {http://dx.doi.org/10.1109/CICC.2010.5617444},
  researchr = {https://researchr.org/publication/ChenIZORTS10},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE Custom Integrated Circuits Conference, CICC 2010, San Jose, California, USA, 19-22 September, 2010, Proceedings},
  editor = {Jacqueline Snyder and Rakesh Patel and Tom Andre},
  publisher = {IEEE},
  isbn = {978-1-4244-5758-8},
}