Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs

Zhwen Chen, Young-Suk Kim, Tadashi Fukuda, Koji Sakui, Takayuki Ohba, Tatsuji Kobayashi, Takashi Obara. Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-6, IEEE, 2021. [doi]

Abstract

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