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3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers

Yi-Chung Chen, Hai Li, Yiran Chen, Robinson E. Pino. 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. In Design, Automation and Test in Europe, DATE 2011, Grenoble, France, March 14-18, 2011. pages 583-586, IEEE, 2011. [doi]

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Yi-Chung Chen

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Hai Li

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Yiran Chen

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Robinson E. Pino

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