Yi-Chung Chen, Hai Li, Yiran Chen, Robinson E. Pino. 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. In Design, Automation and Test in Europe, DATE 2011, Grenoble, France, March 14-18, 2011. pages 583-586, IEEE, 2011. [doi]
@inproceedings{ChenLCP11,
title = {3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers},
author = {Yi-Chung Chen and Hai Li and Yiran Chen and Robinson E. Pino},
year = {2011},
url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5763289},
researchr = {https://researchr.org/publication/ChenLCP11},
cites = {0},
citedby = {0},
pages = {583-586},
booktitle = {Design, Automation and Test in Europe, DATE 2011, Grenoble, France, March 14-18, 2011},
publisher = {IEEE},
isbn = {978-1-61284-208-0},
}