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Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K.-T. Chen, C. Lo, Y. Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y. J. Yang, F.-C. Hsieh, S. H. Chang, H. Liang, S.-H. Chiang, J. H. Liu, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P.-J. Tzeng, M. H. Liao, S. T. Chang, Y.-Y. Tseng, M. H. Lee. Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-4, IEEE, 2020. [doi]

Authors

K.-T. Chen

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C. Lo

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Y. Y. Lin

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C.-Y. Chueh

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C. Chang

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G.-Y. Siang

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Y.-J. Tseng

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Y. J. Yang

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F.-C. Hsieh

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S. H. Chang

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H. Liang

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S.-H. Chiang

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J. H. Liu

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Y. D. Lin

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P. C. Yeh

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C. Y. Wang

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H. Y. Yang

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P.-J. Tzeng

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M. H. Liao

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S. T. Chang

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Y.-Y. Tseng

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M. H. Lee

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