K.-T. Chen, C. Lo, Y. Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y. J. Yang, F.-C. Hsieh, S. H. Chang, H. Liang, S.-H. Chiang, J. H. Liu, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P.-J. Tzeng, M. H. Liao, S. T. Chang, Y.-Y. Tseng, M. H. Lee. Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-4, IEEE, 2020. [doi]
@inproceedings{ChenLLCCSTYHCLC20,
title = {Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory},
author = {K.-T. Chen and C. Lo and Y. Y. Lin and C.-Y. Chueh and C. Chang and G.-Y. Siang and Y.-J. Tseng and Y. J. Yang and F.-C. Hsieh and S. H. Chang and H. Liang and S.-H. Chiang and J. H. Liu and Y. D. Lin and P. C. Yeh and C. Y. Wang and H. Y. Yang and P.-J. Tzeng and M. H. Liao and S. T. Chang and Y.-Y. Tseng and M. H. Lee},
year = {2020},
doi = {10.1109/IRPS45951.2020.9129088},
url = {https://doi.org/10.1109/IRPS45951.2020.9129088},
researchr = {https://researchr.org/publication/ChenLLCCSTYHCLC20},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3199-3},
}