Yiran Chen, Hai Li, XiaoBin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang 0002. A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme. J. Solid-State Circuits, 47(2):560-573, 2012. [doi]
@article{ChenLWZXZ12,
title = {A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme},
author = {Yiran Chen and Hai Li and XiaoBin Wang and Wenzhong Zhu and Wei Xu and Tong Zhang 0002},
year = {2012},
doi = {10.1109/JSSC.2011.2170778},
url = {http://dx.doi.org/10.1109/JSSC.2011.2170778},
researchr = {https://researchr.org/publication/ChenLWZXZ12},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {47},
number = {2},
pages = {560-573},
}