A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme - researchr publication

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Yiran Chen, Hai Li, XiaoBin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang 0002. A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme. J. Solid-State Circuits, 47(2):560-573, 2012. [doi]

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