First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles - researchr publication authors

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Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, C. W. Liu. First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

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