Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, C. W. Liu. First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{ChenLZHLTHWCXCC23,
title = {First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles},
author = {Yu-Rui Chen and Yi-Chun Liu and Zefu Zhao and Wan-Hsuan Hsieh and Jia-Yang Lee and Chien-Te Tu and Bo-Wei Huang and Jer-Fu Wang and Shee-Jier Chueh and Yifan Xing and Guan-Hua Chen and Hung-Chun Chou and Dong Soo Woo and M. H. Lee and C. W. Liu},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185284},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185284},
researchr = {https://researchr.org/publication/ChenLZHLTHWCXCC23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}