A Standard Cell Memory Based on 2T Gain Cell DRAM for Memory-Centric Accelerator Design

Tai-Feng Chen, Yutaka Masuda, Tohru Ishihara. A Standard Cell Memory Based on 2T Gain Cell DRAM for Memory-Centric Accelerator Design. In Jürgen Becker 0001, Andrew Marshall, Tanja Harbaum, Amlan Ganguly, Fahad Siddiqui, Kieran McLaughlin, editors, 36th IEEE International System-on-Chip Conference, SOCC 2023, Santa Clara, CA, USA, September 5-8, 2023. pages 1-6, IEEE, 2023. [doi]

Abstract

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