A new high performance RF LDMOS with vertical n+n-p-p+ drain structure - researchr publication authors

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Xiaofei Chen, Yading Shen, Xuecheng Zou, Shuang-Xi Lin, Wanghui Zou. A new high performance RF LDMOS with vertical n+n-p-p+ drain structure. In IEEE 10th International Conference on ASIC, ASICON 2013, Shenzhen, China, October 28-31, 2013. pages 1-4, IEEE, 2013. [doi]

This author has not been identified. Look up 'Xiaofei Chen' in GoogleThis author has not been identified. Look up 'Yading Shen' in GoogleThis author has not been identified. Look up 'Xuecheng Zou' in GoogleThis author has not been identified. Look up 'Shuang-Xi Lin' in GoogleThis author has not been identified. Look up 'Wanghui Zou' in Google

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