A new high performance RF LDMOS with vertical n+n-p-p+ drain structure - researchr publication

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Xiaofei Chen, Yading Shen, Xuecheng Zou, Shuang-Xi Lin, Wanghui Zou. A new high performance RF LDMOS with vertical n+n-p-p+ drain structure. In IEEE 10th International Conference on ASIC, ASICON 2013, Shenzhen, China, October 28-31, 2013. pages 1-4, IEEE, 2013. [doi]

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