Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li. Origin of high data retention for Ge1Cu2Te3 phase-change memory. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-4, IEEE, 2015. [doi]
@inproceedings{ChenWL15-13,
title = {Origin of high data retention for Ge1Cu2Te3 phase-change memory},
author = {Nian-Ke Chen and Xue-Peng Wang and Xian-Bin Li},
year = {2015},
doi = {10.1109/NVMTS.2015.7457485},
url = {https://doi.org/10.1109/NVMTS.2015.7457485},
researchr = {https://researchr.org/publication/ChenWL15-13},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015},
publisher = {IEEE},
isbn = {978-1-5090-2126-0},
}