Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li. Origin of high data retention for Ge1Cu2Te3 phase-change memory. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-4, IEEE, 2015. [doi]
Abstract is missing.