Table of Contents

• Graphene oxide and TiO2 nano-particle composite based nonvolatile memoryHong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Zhong-Zhen Yu, Rongshan Wei. 1-4 [doi]
• The effect of variation on neuromorphic network based on 1T1R memristor arrayPeng Yao, Huaqiang Wu, Bin Gao, Guo Zhang, He Qian. 1-3 [doi]
• Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditionsAlessandro Grossi, Cristian Zambelli, Piero Olivo, Jérémy Alvarez-Herault, Ken Mackay. 1-4 [doi]
• Neuromorphic hybrid RRAM-CMOS RBM architectureManan Suri, Vivek Parmar, Ashwani Kumar, Damien Querlioz, Fabien Alibart. 1-6 [doi]
• Realization of neural coding by stochastic switching of magnetic tunnel junctionDeming Zhang, Lang Zeng, Fanghui Gong, Tianqi Gao, Shaolong Gao, Youguang Zhang, Weisheng Zhao. 1-4 [doi]
• An enhanced erase mechanism for single poly embedded flash memoryCong Li, Shunqiang Xu, Yaling Chen, Jiancheng Li, Zhenjiang Sun. 1-4 [doi]
• SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architecturesA. Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean Michel Portal. 1-4 [doi]
• A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanismP. Kumbhare, I. Chakraborty, A. K. Singh, S. Chouhan, N. Panwar, Udayan Ganguly. 1-3 [doi]
• The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidationXiaorong Chen, Jie Feng, Haili Ma. 1-5 [doi]
• Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memoryChong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song. 1-3 [doi]
• Iterative programming analysis of dopant-segregated multibit/cell Schottky barrier charge-trapping memoriesYu-Hsuan Chen, Jr-Jie Tsai, Yan-Xiang Luo, Chun-Hsing Shih. 1-3 [doi]
• Nonvolatile multibit SRAM, bit level caching, and multi-context computing for IoTYanjun Ma. 1-3 [doi]
• An electronic synapse based on tantalum oxide materialXue Yang, YiMao Cai, Zhenxing Zhang, Muxi Yu, Ru Huang. 1-4 [doi]
• Excitatory post-synaptic current and synaptic plasticity of semiconducting polymer/electrolyte systemF. Zeng, X. J. Li, J. T. Zhang, Y. D. Hu, W. S. Dong, S. H. Lu, A. Liu. 1-4 [doi]
• Hardware acceleration for neuromorphic computing: An evolving viewBeiye Liu, Xiaoxiao Liu, Chenchen Liu, Wei Wen, M. Meng, Hai Li, Yiran Chen. 1-4 [doi]
• Memristor-based random access memory: The delayed switching effect could revolutionize memory designFrank Zhigang Wang, Leon O. Chua, Na Helian. 1-8 [doi]
• Theory study and implementation of configurable ECC on RRAM memoryMingqing Wang, Ning Deng, Huaqiang Wu, Qian He. 1-3 [doi]
• Influence of ionic size to the pulse responses of semiconducting polymer/electrolyte hetero-junctionsX. J. Li, F. Zeng, J. T. Zhang, Y. D. Hu, W. S. Dong, S. H. Lu, A. Liu. 1-4 [doi]
• 1S1R device with self-compliance property for high density cross-point memory applicationsXinyi Li, Huaqiang Wu, Ning Deng, He Qian. 1-3 [doi]
• STT-RAM read stability in DRAM operating regionH. Kazama, T. Kawahara. 1-4 [doi]
• Origin of high data retention for Ge1Cu2Te3 phase-change memoryNian-Ke Chen, Xue-Peng Wang, Xian-Bin Li. 1-4 [doi]
• SOT-MRAM based on 1Transistor-1MTJ-cell structureAlexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr. 1-4 [doi]
• Performance of cell-to-cell interference mitigation in 1y-nm MLC flash memoryThomas P. Parnell, Nikolaos Papandreou, Thomas Mittelholzer, Haralampos Pozidis. 1-4 [doi]
• Extensible neuromorphic computing simulator based on a programmable hardwareShikai Wang, Cheng Ma, Dong Wang, Jing Pei. 1-3 [doi]
• Influence of selector-introduced compliance current on HfOx RRAM switching operationYichen Fang, YiMao Cai, Zongwei Wang, Zhizhen Yu, Xue Yang, Ru Huang. 1-3 [doi]
• Nonvolatile radiation hardened DICE latchTingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao. 1-4 [doi]
• Design space exploration of latency and bandwidth in RRAM-based solid state drivesLorenzo Zuolo, Cristian Zambelli, Rino Micheloni, Stephen Bates, Piero Olivo. 1-4 [doi]
• A new computing rule for neuromorphic engineeringLei Deng, Dong Wang, Guoqi Li, Ziyang Zhang, Jing Pei. 1-3 [doi]
• Real-time tracking based on neuromrophic visionHongmin Li, Jing Pei, Guoqi Li. 1-7 [doi]
• Reliability and hardware implementation of rank modulation flash memoryYanjun Ma, Yue Li 0001, Edwin Chihchuan Kan, Jehoshua Bruck. 1-5 [doi]
• Understanding the crystallization mechanism of Ge-Te-Ti phase change materialXinglong Ji, Mi Zhou, Liangcai Wu, Liangliang Cao, Zhitang Song. 1-4 [doi]
• A three-dimensional numerical simulator of phase-change memory by random nucleation and growth approachJianwei Zhao, Yiqun Wei, Chong Chen, Xinnan Lin, Zhitang Song. 1-4 [doi]
• A ferroelectric-based non-volatile flip-flop for wearable healthcare systemsShintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto, Hiromitsu Kimura, Takaaki Fuchikami, Kyoji Marumoto, Yoshikazu Fujimori. 1-4 [doi]
• Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT: PSS/Ta memristorWenqiang Luo, Fang-Yuan Yuan, Huaqiang Wu, Liyang Pan, Ning Deng, Fei Zeng, Rongshan Wei, Xuanjing Cai. 1-4 [doi]
• A 16 Mb RRAM test chip based on analog power system with tunable write pulsesXiangchao Ma, Huaqiang Wu, Dong Wu, He Qian. 1-3 [doi]
• FPGA-based neuromorphic computing system with a scalable routing networkDong Wang, Lei Deng, Pei Tang, Cheng Ma, Jing Pei. 1-4 [doi]