Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr. SOT-MRAM based on 1Transistor-1MTJ-cell structure. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-4, IEEE, 2015. [doi]
Abstract is missing.