Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Frank Zhigang Wang, Leon O. Chua, Na Helian. Memristor-based random access memory: The delayed switching effect could revolutionize memory design. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-8, IEEE, 2015. [doi]

Abstract

Abstract is missing.