Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Frank Zhigang Wang, Leon O. Chua, Na Helian. Memristor-based random access memory: The delayed switching effect could revolutionize memory design. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-8, IEEE, 2015. [doi]

@inproceedings{WangCH15-9,
  title = {Memristor-based random access memory: The delayed switching effect could revolutionize memory design},
  author = {Frank Zhigang Wang and Leon O. Chua and Na Helian},
  year = {2015},
  doi = {10.1109/NVMTS.2015.7457481},
  url = {https://doi.org/10.1109/NVMTS.2015.7457481},
  researchr = {https://researchr.org/publication/WangCH15-9},
  cites = {0},
  citedby = {0},
  pages = {1-8},
  booktitle = {2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015},
  publisher = {IEEE},
  isbn = {978-1-5090-2126-0},
}