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Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies

Yiran Chen, XiaoBin Wang, Hai Li, Haiwen Xi, Yuan Yan, Wenzhong Zhu. Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies. IEEE Trans. VLSI Syst., 18(12):1724-1734, 2010. [doi]

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Yiran Chen

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XiaoBin Wang

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Hai Li

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Haiwen Xi

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Yuan Yan

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Wenzhong Zhu

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