Yiran Chen, XiaoBin Wang, Hai Li, Haiwen Xi, Yuan Yan, Wenzhong Zhu. Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies. IEEE Trans. VLSI Syst., 18(12):1724-1734, 2010. [doi]
@article{ChenWLXYZ10,
title = {Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies},
author = {Yiran Chen and XiaoBin Wang and Hai Li and Haiwen Xi and Yuan Yan and Wenzhong Zhu},
year = {2010},
doi = {10.1109/TVLSI.2009.2032192},
url = {http://dx.doi.org/10.1109/TVLSI.2009.2032192},
tags = {design},
researchr = {https://researchr.org/publication/ChenWLXYZ10},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {18},
number = {12},
pages = {1724-1734},
}