Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory - researchr publication authors

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Chong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song. Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-3, IEEE, 2015. [doi]

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