Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory

Chong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song. Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015. pages 1-3, IEEE, 2015. [doi]

@inproceedings{ChenWZLS15,
  title = {Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory},
  author = {Chong Chen and Yiqun Wei and Jianwei Zhao and Xinnan Lin and Zhitang Song},
  year = {2015},
  doi = {10.1109/NVMTS.2015.7457430},
  url = {https://doi.org/10.1109/NVMTS.2015.7457430},
  researchr = {https://researchr.org/publication/ChenWZLS15},
  cites = {0},
  citedby = {0},
  pages = {1-3},
  booktitle = {2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China, October 12-14, 2015},
  publisher = {IEEE},
  isbn = {978-1-5090-2126-0},
}