Gate leakage properties of MOS devices with tri-layer high-k gate dielectric - researchr publication authors

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W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu. Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. Microelectronics Reliability, 47(6):937-943, 2007. [doi]

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