W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu. Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. Microelectronics Reliability, 47(6):937-943, 2007. [doi]
@article{ChenXLLX07,
title = {Gate leakage properties of MOS devices with tri-layer high-k gate dielectric},
author = {W. B. Chen and J. P. Xu and P. T. Lai and Y. P. Li and S. G. Xu},
year = {2007},
doi = {10.1016/j.microrel.2006.06.002},
url = {http://dx.doi.org/10.1016/j.microrel.2006.06.002},
researchr = {https://researchr.org/publication/ChenXLLX07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {6},
pages = {937-943},
}