Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters

Ran Cheng, Ming Tian, Changfeng Wang, Zhimei Cai, Jie Zhang, Yan-yan Zhang, Yi Zhao. Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-4, IEEE, 2019. [doi]

@inproceedings{ChengTWCZZZ19,
  title = {Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters},
  author = {Ran Cheng and Ming Tian and Changfeng Wang and Zhimei Cai and Jie Zhang and Yan-yan Zhang and Yi Zhao},
  year = {2019},
  doi = {10.1109/ASICON47005.2019.8983454},
  url = {https://doi.org/10.1109/ASICON47005.2019.8983454},
  researchr = {https://researchr.org/publication/ChengTWCZZZ19},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-0735-6},
}