Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters

Ran Cheng, Ming Tian, Changfeng Wang, Zhimei Cai, Jie Zhang, Yan-yan Zhang, Yi Zhao. Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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