Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer. Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proceedings of the IEEE, 105(6):1035-1050, 2017. [doi]
@article{ChevalierSBdABF17,
title = {Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications},
author = {Pascal Chevalier and Michael Schröter and Colombo R. Bolognesi and Vincenzo d'Alessandro and Maria Alexandrova and Josef Bock and Ralf Flickiger and Sébastien Fregonese and Bernd Heinemann and C. Jungemann and Rickard Lovblom and Cristell Maneux and Olivier Ostinelli and Andreas Pawlak and Niccolò Rinaldi and Holger Rücker and Gerald Wedel and Thomas Zimmer},
year = {2017},
doi = {10.1109/JPROC.2017.2669087},
url = {https://doi.org/10.1109/JPROC.2017.2669087},
researchr = {https://researchr.org/publication/ChevalierSBdABF17},
cites = {0},
citedby = {0},
journal = {Proceedings of the IEEE},
volume = {105},
number = {6},
pages = {1035-1050},
}