Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate

Te-Kuang Chiang. Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate. Microelectronics Journal, 104:104893, 2020. [doi]

Abstract

Abstract is missing.