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Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology

Y. T. Chiang, Y. K. Fang, Y. J. Huang, T. H. Chou, S. Y. Yeh, C. S. Lin. Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology. Microelectronics Reliability, 48(11-12):1786-1790, 2008. [doi]

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Y. T. Chiang

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Y. K. Fang

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Y. J. Huang

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T. H. Chou

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S. Y. Yeh

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C. S. Lin

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