Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors - researchr publication authors

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Nguyen Dang Chien, Chun-Hsing Shih, Luu The Vinh, Nguyen Van Kien. Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors. In Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013. pages 73-76, IEEE, 2013. [doi]

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