Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors

Nguyen Dang Chien, Chun-Hsing Shih, Luu The Vinh, Nguyen Van Kien. Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors. In Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013. pages 73-76, IEEE, 2013. [doi]

@inproceedings{ChienSVK13,
  title = {Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors},
  author = {Nguyen Dang Chien and Chun-Hsing Shih and Luu The Vinh and Nguyen Van Kien},
  year = {2013},
  doi = {10.1109/ICICDT.2013.6563306},
  url = {http://dx.doi.org/10.1109/ICICDT.2013.6563306},
  researchr = {https://researchr.org/publication/ChienSVK13},
  cites = {0},
  citedby = {0},
  pages = {73-76},
  booktitle = {Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013},
  publisher = {IEEE},
  isbn = {978-1-4673-4740-2},
}