Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Omar Chihani, Alain Bensoussan, André Durier. Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 2-1, IEEE, 2018. [doi]
@inproceedings{ChihaniTDWCBD18, title = {Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs}, author = {Omar Chihani and Loic Théolier and Jean-Yves Delétage and Eric Woirgard and Omar Chihani and Alain Bensoussan and André Durier}, year = {2018}, doi = {10.1109/IRPS.2018.8353685}, url = {https://doi.org/10.1109/IRPS.2018.8353685}, researchr = {https://researchr.org/publication/ChihaniTDWCBD18}, cites = {0}, citedby = {0}, pages = {2}, booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018}, publisher = {IEEE}, isbn = {978-1-5386-5479-8}, }