Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee. Electrical properties of metal-HfO::2::-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO::2:: gate dielectric. Microelectronics Reliability, 45(5-6):961-964, 2005. [doi]
@article{ChiuLL05:0,
title = {Electrical properties of metal-HfO::2::-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO::2:: gate dielectric},
author = {Fu-Chien Chiu and Shun-An Lin and Joseph Ya-min Lee},
year = {2005},
doi = {10.1016/j.microrel.2004.11.016},
url = {http://dx.doi.org/10.1016/j.microrel.2004.11.016},
researchr = {https://researchr.org/publication/ChiuLL05%3A0},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {5-6},
pages = {961-964},
}