Joseph Ya-min Lee - researchr alias

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Viewing Publication 1 - 6 from 6

2007

An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO::2:: gate dielectricsFu-Chien Chiu, Wen-Chieh Shih, Joseph Ya-min Lee, Huey-Liang Hwang. mr, 47(4-5):548-551, 2007. [doi]

Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applicationsHsin-hao Hsu, Joseph Ya-min Lee. mr, 47(4-5):606-609, 2007. [doi]

The characterization of retention properties of metal-ferroelectric (PbZr::0.53::Ti::0.47::O::3::)-insulator (Dy::2::O::3::, Y::2::O::3::)-semiconductor devicesYu-Di Su, Wen-Chieh Shih, Joseph Ya-min Lee. mr, 47(4-5):619-622, 2007. [doi]

2006

Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistorsShao-You Deng, Chang-Han Wu, Joseph Ya-min Lee. mj, 37(8):678-680, 2006. [doi]

2005

Electrical properties of metal-HfO::2::-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO::2:: gate dielectricFu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee. mr, 45(5-6):961-964, 2005. [doi]

Electrical conduction mechanism in high-dielectric-constant ZrO::2:: thin filmsMing-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee. mr, 45(5-6):969-972, 2005. [doi]

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