Jin-Hee Cho, Jihwan Kim, Wooyoung Lee, Dong Uk Lee, Tae-Kyun Kim, Heat Bit Park, Chunseok Jeong, Myeong-Jae Park, Seung Geun Baek, Seokwoo Choi, Byung Kuk Yoon, Young Jae Choi, Kyo Yun Lee, Daeyong Shim, Jonghoon Oh, Jinkook Kim, Seok Hee Lee. A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 208-210, IEEE, 2018. [doi]
Abstract is missing.