A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range

Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang. A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]

@inproceedings{ChouLLSTCTCOCCC20,
  title = {A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range},
  author = {Chung-Cheng Chou and Zheng-Jun Lin and Chien-An Lai and Chin-I Su and Pei-Ling Tseng and Wei-Chi Chen and Wu-Chin Tsai and Wen-Ting Chu and Tong-Chern Ong and Harry Chuang and Yu-Der Chih and Tsung-Yung Jonathan Chang},
  year = {2020},
  doi = {10.1109/VLSICircuits18222.2020.9163014},
  url = {https://doi.org/10.1109/VLSICircuits18222.2020.9163014},
  researchr = {https://researchr.org/publication/ChouLLSTCTCOCCC20},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-9942-9},
}