Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra. Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

@inproceedings{ChoudhurySZSWM20,
  title = {Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs},
  author = {Nilotpal Choudhury and Uma Sharma and Huimei Zhou and Richard G. Southwick and Miaomiao Wang and Souvik Mahapatra},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9128310},
  url = {https://doi.org/10.1109/IRPS45951.2020.9128310},
  researchr = {https://researchr.org/publication/ChoudhurySZSWM20},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}