A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme

Yeonbae Chung, Byung-gil Jeon, Kang-Deog Suh. A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme. J. Solid-State Circuits, 35(5):697-704, 2000. [doi]

Abstract

Abstract is missing.