Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

Ales Chvála, Lukás Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Satka, Michal Blaho, Dagmar Gregusová, Jan Kuzmik. Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell. In 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, DTIS 2018, Taormina, Italy, April 9-12, 2018. pages 1-6, IEEE, 2018. [doi]

Abstract

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