Marcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano. Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-5, IEEE, 2023. [doi]
Abstract is missing.