Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation

André Clausner, S. Schlipf, G. Kurz, M. Otto, J. Paul, Kay-Uwe Giering, J. Warmuth, André Lange, Roland Jancke, A. Aal, Rüdiger Rosenkranz, Martin Gall, Ehrenfried Zschech. Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5, IEEE, 2018. [doi]

Abstract

Abstract is missing.