Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process

Éric Colinet, Cedric Durand, Patrick Audebert, Philippe Renaux, Denis Mercier, Laurent Duraffourg, Eric Ollier, Fabrice Casset, Pascal Ancey, Lionel Buchaillot, Adrian M. Ionescu. Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process. In 2008 IEEE International Solid-State Circuits Conference, ISSCC 2008, Digest of Technical Papers, San Francisco, CA, USA, February 3-7, 2008. pages 332-333, IEEE, 2008. [doi]

Abstract

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