Analyzing the behavior of FinFET SRAMs with resistive defects

Thiago Santos Copetti, Tiago R. Balen, Guilherme Cardoso Medeiros, Leticia Maria Bolzani Poehls. Analyzing the behavior of FinFET SRAMs with resistive defects. In 2017 IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017, Abu Dhabi, United Arab Emirates, October 23-25, 2017. pages 1-6, IEEE, 2017. [doi]

Abstract

Abstract is missing.