Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile - researchr publication

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I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo. Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectronics Reliability, 45(3-4):493-498, 2005. [doi]

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