Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling

Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann. Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. VLSI Syst., 20(8):1487-1495, 2012. [doi]

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