Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress - researchr publication authors

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Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, S. Krause, Andreas Graff, Michél Simon-Najasek. Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-7, IEEE, 2021. [doi]

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