Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, Patrick Waltereit, W. Bronner, Rüdiger Quay, S. Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, M. Fagerlind, E. Ö. Sveinbjörnsson. Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability, 49(5):474-477, 2009. [doi]

Authors

M. Dammann

This author has not been identified. Look up 'M. Dammann' in Google

W. Pletschen

This author has not been identified. Look up 'W. Pletschen' in Google

Patrick Waltereit

This author has not been identified. Look up 'Patrick Waltereit' in Google

W. Bronner

This author has not been identified. Look up 'W. Bronner' in Google

Rüdiger Quay

This author has not been identified. Look up 'Rüdiger Quay' in Google

S. Müller

This author has not been identified. Look up 'S. Müller' in Google

Michael Mikulla

This author has not been identified. Look up 'Michael Mikulla' in Google

Oliver Ambacher

This author has not been identified. Look up 'Oliver Ambacher' in Google

P. J. van der Wel

This author has not been identified. Look up 'P. J. van der Wel' in Google

S. Murad

This author has not been identified. Look up 'S. Murad' in Google

T. Rödle

This author has not been identified. Look up 'T. Rödle' in Google

R. Behtash

This author has not been identified. Look up 'R. Behtash' in Google

F. Bourgeois

This author has not been identified. Look up 'F. Bourgeois' in Google

K. Riepe

This author has not been identified. Look up 'K. Riepe' in Google

M. Fagerlind

This author has not been identified. Look up 'M. Fagerlind' in Google

E. Ö. Sveinbjörnsson

This author has not been identified. Look up 'E. Ö. Sveinbjörnsson' in Google