M. Dammann, W. Pletschen, Patrick Waltereit, W. Bronner, Rüdiger Quay, S. Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, M. Fagerlind, E. Ö. Sveinbjörnsson. Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability, 49(5):474-477, 2009. [doi]
Abstract is missing.